Measurement of backscattered dose at metallic interfaces using high energy electron beams

Abstract

Background

The amount of backscattered electrons depends on the thickness of the backscattering metal. The electron backscatter increases with the increase in thickness of the metal until a saturation level is reached and thereafter no change in scatter enhancement is noticed.

Aim

Electron backscatter effects at metallic interfaces were analysed in this study. High energy electron beams ranging from 6 to 20 MeV were used.

Materials/Methods

Measurements were carried out with a PTW thin-window parallel plate ionization chamber and an RDM-1F electrometer. Thin sheets of aluminium, copper and lead were used as inhomogeneities. The chamber was positioned below the inhomogeneities with the gantry maintained under the couch.

Results

The electron backscatter factor (EBSF) increases with increase in energy for aluminium, copper and lead. With low atomic number materials EBSF increases with increase in scatterer thickness and for lead it attains saturation within a few millimetres.

Conclusions

The information from this study could be useful in predicting the increase in dose at the metal-tissue interface due to electron backscatter.